CVD Graphene on Si 2.5cmx2.5cmProduct Name Name: CVD Graphene on Si 2. 5 cmx2. 5 cm Product Overview The process of preparing graphene by CVD mainly includes three important influencing factors: substrate, precursor, and growth conditions. Among them, the substrate is an important condition for the growth of graphene. Currently, 8 10 transition metals (such as Fe, RuCoRhIrNiPdPtCuAu And alloys (such as Co Ni, Au Ni, Ni Mo, stainless steel). The mechanism of preparing graphene by

Spiral multi-walled carbon nanotubes are formed by a plurality of graphite layers bent around a central axis and arranged spirally to form a continuous tubular structure

Streptomycin modified polystyrene microspheres are modified with streptavidin based on polystyrene microspheres

Orientation also gives them excellent hydrodynamic properties

Its excellent conductivity and chemical stability make it have potential application value in these fields

optical properties

it can be used to prepare optical rotation detectors and study their photocurrent properties under different magnetic fields and temperatures

Surface plasmon effect: The plasmon effect on the surface of silver nanowires can improve their response speed and performance in fields such as optoelectronic devices and biomedical applications

used in waste gas purification

Rubber Industry: As an effective inorganic active agent and vulcanisation accelerator

Name: Single Layer WS2 on sapphire substrate

Multifunctionality: PEG has functional groups such as methoxy

nano titanium dioxide sol can decompose harmful gases and some inorganic compounds in the air